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Results 1 to 25 of 44

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Enhanced band edge luminescence from stress and defect free GaN nanowall network morphologyTHAKUR, Varun; KESARIA, Manoj; SHIVAPRASAD, S. M et al.Solid state communications. 2013, Vol 171, pp 8-13, issn 0038-1098, 6 p.Article

Sb adsorption and desorption pathways on (2 x 1) and c(4 x 4) reconstructed Si(001) surfacesVINOD KUMAR PALIWAL; KUMAR, Mahesh; SHIVAPRASAD, S. M et al.Surface science. 2005, Vol 585, Num 1-2, pp 53-58, issn 0039-6028, 6 p.Article

On the coverage and structure of the Ag/Si(√3 x √3)-R30 surface phaseSHIVAPRASAD, S. M; APARNA, Y; SANDEEP SINGH et al.Solid state communications. 1998, Vol 107, Num 6, pp 257-261, issn 0038-1098Article

A new material for the fabrication of thin film resistorsANGADI, M. A; SHIVAPRASAD, S. M.Journal of materials science letters. 1984, Vol 3, Num 8, pp 739-742, issn 0261-8028Article

Ga induced 2D superstructural phase diagram on trenched Si(5 5 12) surfaceKUMAR, Praveen; KUMAR, Mahesh; SHIVAPRASAD, S. M et al.Surface science. 2012, Vol 606, Num 13-14, pp 1045-1049, issn 0039-6028, 5 p.Article

AES investigation of annealing effects on the oxygen adsorbed Mn/Si(111) interfaceSINGH, S; SHIVAPRASAD, S. M; ANANDAN, C et al.Applied surface science. 1999, Vol 152, Num 3-4, pp 213-218, issn 0169-4332Article

Residual thermal desorption studies of Ga adatoms on trenched Si(5 5 12) surfaceKUMAR, Praveen; KUMAR, Mahesh; SHIVAPRASAD, S. M et al.Applied surface science. 2013, Vol 282, pp 348-350, issn 0169-4332, 3 p.Article

Evidence for Dislocation Induced Spontaneous Formation of GaN Nanowalls and Nanocolumns on Bare C-Plane SapphireKESARIA, Manoj; SHETTY, Satish; SHIVAPRASAD, S. M et al.Crystal growth & design. 2011, Vol 11, Num 11, pp 4900-4903, issn 1528-7483, 4 p.Article

Angle-dependent XPS analysis of silicon nitride film deposited on screen-printed crystalline silicon solar cellSINGH, Priyanka; SHIVAPRASAD, S. M; LAL, M et al.Solar energy materials and solar cells. 2009, Vol 93, Num 1, pp 19-24, issn 0927-0248, 6 p.Conference Paper

Effect of ratios of Cd:Se in CdSe nanoparticles on optical edge shifts and photoluminescence propertiesSHARMA, Himani; SHARMA, Shailesh N; SINGH, Gurmeet et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 31, Num 2, pp 180-186, issn 1386-9477, 7 p.Article

Observation of electron transfer in the silicidation and oxidation of molybdenum by AES and EELSBERA, S; SHIVAPRASAD, S. M; SHARMA, J. K. N et al.Applied surface science. 1994, Vol 74, Num 1, pp 13-17, issn 0169-4332Article

Ga-induced restructuring of Si(5 5 12 ) — 2 x 1 reconstructed surface at room temperatureKUMAR, Praveen; KUMAR, Mahesh; MEHTA, B. R et al.Surface science. 2011, Vol 605, Num 15-16, pp 1426-1430, issn 0039-6028, 5 p.Article

The Origin of Shape, Orientation, and Structure of Spontaneously Formed Wurtzite GaN Nanorods on Cubic Si(001) SurfaceSHETTY, Satish; KESARIA, Manoj; GHATAK, Jay et al.Crystal growth & design. 2013, Vol 13, Num 6, pp 2407-2412, issn 1528-7483, 6 p.Article

A superstructural 2D-phase diagram for Ga on the Si(111)-7x7 systemPRAVEEN KUMAR; JITHESH KUYYALIL; MAHESH KUMAR et al.Solid state communications. 2011, Vol 151, Num 23, pp 1758-1762, issn 0038-1098, 5 p.Article

Geometric and electronic changes during interface alloy formation in Cu/Pd bimetal layersKHANUJA, Manika; MEHTA, B. R; SHIVAPRASAD, S. M et al.Thin solid films. 2008, Vol 516, Num 16, pp 5435-5439, issn 0040-6090, 5 p.Conference Paper

Study of the chemical bonding of titanium with silicon and oxygen by AES and seelsSHARMA, J. K. N; CHAKRABORTY, B. R; SHIVAPRASAD, S. M et al.Journal of electron spectroscopy and related phenomena. 1990, Vol 50, Num 3, pp 185-194, issn 0368-2048, 10 p.Article

The role of Ti 3d electrons in the formation of titanium silicide and oxideSHARMA, J. K. N; CHAKRABORTY, B. R; SHIVAPRASAD, S. M et al.Vacuum. 1990, Vol 41, Num 1-3, pp 31-33, issn 0042-207X, 3 p.Conference Paper

Characterization of ultrathin platinum overlayers deposited on a W(110) surface = Caractérisation des surcouches ultraminces de platine déposées sur la surface W(110)SHIVAPRASAD, S. M; DEMMIN, R. A; MADEY, T. E et al.Thin solid films. 1988, Vol 163, pp 393-397, issn 0040-6090Conference Paper

Sb induced (7 × 7) to (1 × 1) surface phase transformation of the Si(111) surfaceVINOD KUMAR PALIWAL; VEDESHWAR, A. G; SHIVAPRASAD, S. M et al.Solid state communications. 2003, Vol 127, Num 1, pp 7-11, issn 0038-1098, 5 p.Article

Chemical shifts of silicon and titanium in titanium silicide studied by Auger electron spectroscopy, slow electron energy-loss spectroscopy, and internal x-ray photoelectron spectroscopySHARMA, J. K. N; CHAKRABORTY, B. R; SHIVAPRASAD, S. M et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1988, Vol 6, Num 6, pp 3120-3124, issn 0734-2101Article

Observation of ion-induced chemically bonded states of Auger LVV peak on a Si(111) surfaceSHARMA, J. K. N; CHAKRABORTY, B. R; SHIVAPRASAD, S. M et al.Journal of materials science letters. 1987, Vol 6, Num 6, pp 624-626, issn 0261-8028Article

X-ray photoelectron and X-ray Auger electron spectroscopy studies of heavy ion irradiated C60 filmsKUMAR, Amit; SINGH, F; GOVIND et al.Applied surface science. 2008, Vol 254, Num 22, pp 7280-7284, issn 0169-4332, 5 p.Article

Size-induced changes in optical and X-ray photoelectron spectra of GaN nanoparticles deposited at lower substrate temperatureMANN, A. K; VARANDANI, D; MEHTA, B. R et al.Journal of nanoscience and nanotechnology (Print). 2005, Vol 5, Num 11, pp 1858-1863, issn 1533-4880, 6 p.Article

XPS and XAES studies of as grown and nitrogen incorporated tetrahedral amorphous carbon films deposited by pulsed unfiltered cathodic vacuum arc processPANWAR, O. S; APARNA, Y; SHIVAPRASAD, S. M et al.Applied surface science. 2004, Vol 221, Num 1-4, pp 392-401, issn 0169-4332, 10 p.Article

Effect of high substrate bias and hydrogen and nitrogen incorporation on filtered cathodic vacuum arc deposited tetrahedral amorphous carbon filmsPANWAR, O. S; MOHD. ALIM KHAN; KUMAR, Mahesh et al.Thin solid films. 2008, Vol 516, Num 8, pp 2331-2340, issn 0040-6090, 10 p.Article

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